0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 features low current (max. 100 ma). low voltage (max. 65 v). absolute maximum ratings ta = 25 parameter symbol bc856 BC857 bc858 unit collector-base voltage v cbo -80 -50 -30 v collector-emitter voltage v ceo -65 -45 -30 v emitter-base voltage v ebo v collector current i c ma peak collector current i cm ma peak base current i bm ma total power dissipation * p tot mw junction temperature t j storage temperature t stg operating ambient temperature r amb thermal resistance from junction to ambient * r th j-a k/w * transistor mounted on an fr4 printed-circuit board, standard footprint. -5 150 -65to+150 -65to+150 500 -100 -200 -200 250 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors bc856,BC857,bc858 smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123
smd type ic smd type transistors electrical characteristics ta = 25 symbol testconditons min typ max unit i cbo v cb =-30v,i e = 0 -1 -15 na i cbo v cb =-30v,i e =0,t j = 150 -4 a i ebo v eb =-5v,i c = 0 -100 na bc856 125 475 BC857 125 800 bc856a,BC857a 125 250 bc856b,BC857b,bc858b 220 475 BC857c 420 800 i c =-10ma;i b = -0.5 ma -75 -300 mv i c = -100 ma; i b = -5 ma; * -250 -650 mv i c =-10ma;i b = -0.5 ma -700 mv i c = -100 ma; i b = -5 ma; * -850 mv i c =-2ma;v ce = -5 v -600 -650 -750 mv i c =-10ma;v ce = -5 v -820 mv c c v cb =-10v;i e =ie=0;f=1mhz 4.5 pf f t v ce =-5v;i c = -10 ma;f = 100 mhz 100 mhz nf i c = -200 a; v ce =-5v;r s =2k; f = 1 khz;b = 200 hz 210db * pulse test: tp 300 s, ? 0.02. transition frequency parameter dc current gain h fe collector-emitter saturation voltage v ce(sat) noise figure i c =-2ma;v ce =-5v collector cutoff current collector capacitance emitter cutoff current base-emitter saturation voltage v be(sat) v be base-emitter voltage bc856,BC857,bc858 h fe classification type bc856 bc856a bc856b marking 3d 3a 3b type BC857 BC857a BC857b BC857c marking 3h 3e 3f 3g type bc858b marking 3k sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors smd type ic smd type transistors product specification 4008-318-123
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